600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

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HALF BRIDGE GATE DRIVER

文件：652.66 Kbytes 页数：12 Pages

DIODES

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丝印：DGD2184M；Package：SO-8；600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

美台半导体

丝印：DGD2184M；Package：SO-8；HALF BRIDGE GATE DRIVER

文件：652.66 Kbytes 页数：12 Pages

DIODES

美台半导体

600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

美台半导体

HALF BRIDGE GATE DRIVER IN SO-8

The DGD2184M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2184M’s highside to switch to 600V in a bootstrap operation.The DGD2184M logic inputs are compatible with standard T •Floating High-side Driver in Bootstrap Operation to 600V\n•1.4A Source / 1.8A Sink Output Current Capability\n•Internal Dead Time of 395ns to Protect MOSFETs\n•Logic Input (IN and SD*) 3.3V Capability\n•Undervoltage Lockout for High and Low Side Drivers\n•Totally Lead-Free & Fully RoHS Compliant (N;

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

DIODES

美台半导体