HALF BRIDGE GATE DRIVER IN SO-8

文件：734.33 Kbytes 页数：12 Pages

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丝印：DGD21844M；Package：SO-14；HALF-BRIDGE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

文件：872.2 Kbytes 页数：12 Pages

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丝印：DGD2184M；Package：SO-8；600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

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丝印：DGD21844M；Package：SO-14；HALF-BRIDGE GATE DRIVER

文件：637.37 Kbytes 页数：12 Pages

DIODES

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丝印：DGD2184M；Package：SO-8；HALF BRIDGE GATE DRIVER

文件：652.66 Kbytes 页数：12 Pages

DIODES

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HALF-BRIDGE GATE DRIVER

The DGD2184 is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2184’s high-side to switch to 600V in a bootstrap operation.\nThe DGD2184 logic inputs are compatible with standard TTL Floating High-Side Driver in Bootstrap Operation to 600V\nDrives Two N-Channel MOSFETs or IGBTs in Half-Bridge Configuration\n1.4A Source/1.8A Sink Output Current Capability\nOutputs Tolerant to Negative Transients\nInternal Dead Time of 400ns to Protect MOSFETs\nWide Low-Side Gate Driver and Logic ;

Diodes

美台半导体

HALF-BRIDGE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

文件：872.2 Kbytes 页数：12 Pages

DIODES

美台半导体

HALF-BRIDGE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

文件：872.2 Kbytes 页数：12 Pages

DIODES

美台半导体

600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

美台半导体

600V HALF BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

文件：673.63 Kbytes 页数：12 Pages

DIODES

美台半导体