丝印：DGD2103M；Package：SO-8；HALF-BRIDGE GATE DRIVER IN SO-8

Features Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration Designed for Enhanced Performance in Noisy Motor Applications 290mA Source/600mA Sink Output Current Capability Outputs Tolerant to Negative Transients Inte

文件：897.23 Kbytes 页数：11 Pages

DIODES

美台半导体

HALF-BRIDGE GATE DRIVER IN SO-8

Features Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration Designed for Enhanced Performance in Noisy Motor Applications 290mA Source/600mA Sink Output Current Capability Outputs Tolerant to Negative Transients Inte

文件：897.23 Kbytes 页数：11 Pages

DIODES

美台半导体

HALF-BRIDGE GATE DRIVER IN SO-8

The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.\nThe DGD2103M logic inputs are compatible with standar Floating High-Side Driver in Bootstrap Operation to 600V\nDrives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration\nDesigned for enhanced performance in noisy motor applications\n290mA Source/600mA Sink Output Current Capability\nOutputs Tolerant to Negative Transients\nInternal Dead Tim;

Diodes

美台半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

PAM

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