PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias transistors ■

文件：845.94 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

NEXPERIA

安世

PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：842.86 Kbytes 页数：12 Pages

NEXPERIA

安世

1008 to 1512W Power Factor Correction Module

Features • Suitable For Developing Custom Supplies • Up to 96.5 Efficient • Compact Full Brick Package (116.8 x 61 x 12.7mm) • Up to 100°C Rated Baseplate Temperature • Conduction Cooled Via Baseplate Benefits • Module Solution Reduces Risk, Time and Cost • Less Waste Heat to Manage and

文件：1.32924 Mbytes 页数：5 Pages

TDK

东电化

PACKAGE OUTLINE DIMENSIONS

文件：776.88 Kbytes 页数：32 Pages

DIODES

美台半导体

CONTROLLING DIMENSION IS MILLIMETER

文件：64.739 Kbytes 页数：1 Pages

AOSMD

万国半导体

Package Outline

文件：190.42 Kbytes 页数：1 Pages

GMT

致新科技

SUGGESTED PAD LAYOUT

文件：174 Kbytes 页数：12 Pages

DIODES

美台半导体

PACKAGE OUTLINE DIMENSIONS

文件：776.88 Kbytes 页数：32 Pages

DIODES

美台半导体

PACKAGE OUTLINE DIMENSIONS

文件：62.08 Kbytes 页数：1 Pages

BILIN

银河微电