Low profile 1 mm seated height

文件：110.26 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Saw MLF PEL (Plated End Lead) Package

文件：754.36 Kbytes 页数：3 Pages

amkor

安靠科技

丝印：DFN；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：DFN；Package：DSBGA；SN74LVC1G139 2-to-4 Line Decoder

1 Features 1• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Maximum tpd of 4.9 ns at 3.3 V and 15 pF • Low Power Consumption, 10-μA Maximum ICC • ±24-mA Output Drive at

文件：751.09 Kbytes 页数：27 Pages

TI

德州仪器

丝印：DFN；Package：DSBGA；SN74LVC1G139 2-to-4 Line Decoder

1 Features 1• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Maximum tpd of 4.9 ns at 3.3 V and 15 pF • Low Power Consumption, 10-μA Maximum ICC • ±24-mA Output Drive at

文件：753.07 Kbytes 页数：27 Pages

TI

德州仪器

丝印：DFN；Package：DSBGA；SN74LVC1G139 2-to-4 Line Decoder

1 Features 1• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Maximum tpd of 4.9 ns at 3.3 V and 15 pF • Low Power Consumption, 10-μA Maximum ICC • ±24-mA Output Drive at

文件：753.07 Kbytes 页数：27 Pages

TI

德州仪器

丝印：DFN；Package：DO-214AB；Surface Mount Transient Voltage Suppressors

文件：2.64068 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：DFN；Package：DO-214AB；Surface Mount Transient Voltage Suppressors

文件：267.38 Kbytes 页数：4 Pages

ANOVA

林朋科技

PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

NEXPERIA

安世

PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：842.86 Kbytes 页数：12 Pages

NEXPERIA

安世