Gold metallised multi-purpose silicon DMOS RF FET

TT Electronics

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual P-Channel MOSFET • Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant

文件：168.14 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • P-Channel MOSFET • Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Not

文件：165.49 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters Features • Lo

文件：488.37 Kbytes 页数：5 Pages

DIODES

美台半导体