Standard Recovery Diodes

文件：699.73 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

Standard Recovery Diodes

文件：699.73 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

D200ERU SERIES

文件：319.85 Kbytes 页数：2 Pages

MPD

丝印：D2065C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：652.25 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.1743 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：D2060；Package：SOT23-6L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 20V,ID = 2.8A RDS(ON)

文件：1.0384 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：D2062；Package：SOP-J8；2ch High Side Switch ICs for USB Devices and Memory Cards

文件：535.67 Kbytes 页数：25 Pages

ROHM

罗姆

丝印：D2062；Package：SOP-J8；2ch High Side Switch ICs for USB Devices and Memory Cards

文件：535.67 Kbytes 页数：25 Pages

ROHM

罗姆

丝印：D2066；Package：SOP-J8；2ch High Side Switch ICs for USB Devices and Memory Cards

文件：535.67 Kbytes 页数：25 Pages

ROHM

罗姆

高压分离器件 二极管

• 电流范围广\n• 高浪涌承载\n• 外型为DO-200AC（K-PUK），NPS的盘式D壳\n• 符合RoHS规范;

NPS

尼尔半导体