丝印：D160PT801；Package：FCCSP；DS160PT801 PCIe® 4.0, 16 Gbps, 8-Lane (16-Channel) Retimer

1 Features • 8-lane (16-channel) protocol-aware PCI-express retimer supporting 16.0, 8.0, 5.0, and 2.5 GT/s interfaces • Inter-chip communication (ICC) enable dual chip link width scaling to form 16-lane Gen-4 retimer • Supports common clock, separate reference clock with no spread spectrum

文件：630.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：D160PT801；Package：FCCSP；DS160PT801 PCIe® 4.0, 16 Gbps, 8-Lane (16-Channel) Retimer

1 Features • 8-lane (16-channel) protocol-aware PCI-express retimer supporting 16.0, 8.0, 5.0, and 2.5 GT/s interfaces • Inter-chip communication (ICC) enable dual chip link width scaling to form 16-lane Gen-4 retimer • Supports common clock, separate reference clock with no spread spectrum

文件：630.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：D160PT801；Package：FCCSP；DS160PT801 PCIe® 4.0, 16 Gbps, 8-Lane (16-Channel) Retimer

1 Features • 8-lane (16-channel) protocol-aware PCI-express retimer supporting 16.0, 8.0, 5.0, and 2.5 GT/s interfaces • Inter-chip communication (ICC) enable dual chip link width scaling to form 16-lane Gen-4 retimer • Supports common clock, separate reference clock with no spread spectrum

文件：630.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：D1665C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：678.7 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D1612C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.07298 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D1691；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C)

文件：1.1107 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：D1691；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C)

文件：1.1107 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：D16N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@8A

文件：464.2 Kbytes 页数：8 Pages

PANJIT

強茂