丝印：D16N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：431.14 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：D16P04；Package：TO-252AA；40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

文件：594.43 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D16P04；Package：TO-252AA；40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

文件：633.76 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D16P06A；Package：TO-252AA；60V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-8A

文件：379.5 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：D168104K；Package：WQFN；MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOSFET Stepping motors driver : 4 circuits, IRIS driver : 1 circuit. • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block

文件：316.7 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：D1683；Package：TO-126ML；50V/4A Switching Applications

文件：422.97 Kbytes 页数：7 Pages

SANYO

三洋

丝印：D1683；Package：TO-126ML；50V/4A Switching Applications

文件：422.97 Kbytes 页数：7 Pages

SANYO

三洋

丝印：D1691；Package：TO-220F；Silicon NPN Power Transistor

文件：618.08 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

4500 V IGCT/IGBT - 续流二极管圆盘

\n优势:\n• 提高关断能力，可达5 kA /μs\n• 80kA@10ms的极端过流能力提高了系统的鲁棒性\n• 堆栈设计节省50％的时间;

Infineon

英飞凌

Super trench MOSFET

Jingheng

晶恒