丝印：D1691；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C)

文件：1.1107 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

NPN Epitaxial Silicon Transistor

Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151

文件：52.87 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : PC=1.5W(Ta=25°C) • Complementary to KTB1151.

文件：396.38 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features High Power Dissipation :PC=1.5W(Ta=25℃ ). Applications Low collector saturation voltage ,large current.

文件：982.39 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子