丝印：D1415B；Package：TO-220SIS；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Power Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B

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