丝印：D1509B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type (Darlington Transistor)

Applications • Micromotor Drivers • Hammer Drivers • Switching • Power Amplifiers Features (1) High DC current gain : hFE = 2000 (min) (VCE = 2 V, IC = 1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) (3) Complementary to TTB1067B

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