丝印：D1415B；Package：TO-220SIS；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Power Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B

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TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

文件：266.92 Kbytes 页数：2 Pages

ISC

无锡固电

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：High current switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC 7 A \nCollector Current ICP 10 A \nCollector power dissipation PC 25 W \nCollector power dissipation PC 2 W \nCollector-Base Voltage VCBO 120 V \nCollector-emitter voltage VCEO 100 V ;

Toshiba

东芝

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANSISTOR NPN TO220SIS

Toshiba Semiconductor and Storage