HORIZONTAL DEFLECTION POWER TRANSISTOR

5 AMPERE POWER TRANSISTORS 1500 VOLTS 80 WATTS

文件：123.03 Kbytes 页数：3 Pages

MOSPEC

统懋

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

文件：60.71 Kbytes 页数：1 Pages

WINGS

永盛电子

NPN SILICON TRANSISTOR

13002 transistor chip manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: D142AG-00 Chip thickness: 240±20µm Die size: 1420× 1420µm 2 Welding position size: B pole 300×245µm2, E pole 350×245µm2 Electrode metal: aluminum Back metal: silver or gold

文件：67.58 Kbytes 页数：1 Pages

HUASHAN

华汕电子器件

Technische Information

Features · Specially designed for oeration with small snubber · 140°C maximum junction temperature · Low losses, soft recovery · Electroactive passivation by a-C:H

文件：140.12 Kbytes 页数：5 Pages

EUPEC

Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity analog or digital linearization systems • Universal broadband

文件：199.94 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimiz

文件：209.47 Kbytes 页数：13 Pages

恩XP

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage,high speed • Built-in damper diode APPLICATIONS • For TV horizontal deflection output applications

文件：143.09 Kbytes 页数：3 Pages

SAVANTIC

Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.48 Kbytes 页数：13 Pages

恩XP

Full blocking capability 50/60Hz over a wide temperature range

Key Parameters    VRRM 6800 V    IFAVM 1590 A (TC=100 °C)    IFSM 3570A (T 28000 A C=55°C)    VT0 0,75 V    rT 0,42 mΩ    RthJC 14 K/kW    Clamping Force 15 … 36 kN    Max. Diameter 76 mm    Contact Diameter 50 mm    Height 26 mm Features • Full blocking capability 50/60Hz over a wide

文件：245.11 Kbytes 页数：9 Pages

INFINEON

英飞凌

Rectifier Diode

Rectifier Diode

文件：217.66 Kbytes 页数：8 Pages

EUPEC