SILICON NPN TRIPLE DIFFUSED TYPE

POWER AMPLIFIER APPLICATIONS.

文件：105.57 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

文件：117.21 Kbytes 页数：3 Pages

SAVANTIC

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS

文件：173.54 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

文件：147.75 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：68.58 Kbytes 页数：3 Pages

ISC

无锡固电

PolySwitch짰 PTC Devices

PolySwitch™ Resettable Device Short Form Catalog PolySwitch Resettable Device Benefits: • Reduced warranty and service costs • Increased reliability • Superior shock and vibration withstand • Wide variety of applications Features: • Remotely resettable • Testable • Solid-state • Variety

文件：101.44 Kbytes 页数：2 Pages

MACOM

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

文件：183.27 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件：156.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP