isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

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ISC

无锡固电

开关电源转换器电路

D1410是一块开关电源转换器电路。具有较宽的电压输入范围，能连续输出5A电流，有极高的瞬态稳定性。内置热保护功能，所需外围元件少。\n D1410采用SOP8的封装形式封装。 ·5A输出电流\n·3.6～40V输入范围\n·1.22～38V可调输出\n·效率高达88%\n·内置热关断保护电路\n·250kHz固定频率;

Silicore

芯谷科技

丝印：D1410B；Package：TO-220SIS；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Voltage Switching Features (1) High DC current gain: hFE = 2000 (min) (VCE = 2 V , IC = 2 A)

文件：153.32 Kbytes 页数：5 Pages

TOSHIBA

东芝

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：36.23 Kbytes 页数：2 Pages

POLYFET

Integrated Circuit Chroma Video Signal Processor

Description: The NTE1410 is an integrated circuit in a 28–Lead DIP type package designed for all color TV video and chrominance signal process circuits. Features: • The NTE1410 provides a total video and chrominance signal processing circuitry, allowing compact set design • Incorpora

文件：35.47 Kbytes 页数：3 Pages

NTE

0.5A HIGH-SPEED MOSFET DRIVERS

GENERAL DESCRIPTION The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logi

文件：65.88 Kbytes 页数：5 Pages

TELCOM