Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity analog or digital linearization systems • Universal broadband

文件：199.94 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimiz

文件：209.47 Kbytes 页数：13 Pages

恩XP

ZIP

SHINDNE

上传：深圳市亚泰盈科电子有限公司

SMA

SHINDENGEN

上传：深圳市粤科源兴科技有限公司

NA

SHINDENGE

上传：深圳权泰科技有限公司