9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

Functional Description[1] The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter

文件：476.75 Kbytes 页数：30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

Functional Description[1] The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter

文件：476.75 Kbytes 页数：30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

Functional Description[1] The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter

文件：476.75 Kbytes 页数：30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2Kx8 Dual-Port Static RAM

Functional Description The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and CY7C136A can be used as either a standalone 8-bit dual-port static

文件：339.21 Kbytes 页数：18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2Kx8 Dual-Port Static RAM

Functional Description The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and CY7C136A can be used as either a standalone 8-bit dual-port static

文件：339.21 Kbytes 页数：18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

文件：558.86 Kbytes 页数：28 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

文件：558.86 Kbytes 页数：28 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

文件：558.86 Kbytes 页数：28 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

文件：558.86 Kbytes 页数：28 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

文件：558.86 Kbytes 页数：28 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司