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CY7C1362B-200BGI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-200BZC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-200BZI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225AC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225AI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225AJC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225AJI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225BGC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225BGI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-225BZC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

技术参数

  • Automotive Qualified:

    N

  • Burst Length (Words):

    0

  • Density (Kb):

    9216

  • Density (Mb):

    9

  • Frequency (MHz):

    166

  • Max. Operating Temp. (°C):

    70

  • Max. Operating VCCQ (V):

    3.60

  • Max. Operating Voltage (V):

    3.63

  • Min. Operating Temp. (°C):

    0

  • Min. Operating VCCQ (V):

    2.40

  • Min. Operating Voltage (V):

    3.14

  • Organization (X x Y):

    256Kb x 36

  • Tape & Reel:

    Y

  • Temp. Classification:

    Commercial

供应商型号品牌批号封装库存备注价格
CY
23+
PLCC52
5700
绝对全新原装!现货!特价!请放心订购!
询价
CYPRESS
24+
PLCC
3500
原装现货,可开13%税票
询价
CY
25+
PLCC
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
25+
PLCC52
3629
原装优势!房间现货!欢迎来电!
询价
CYPRESS/赛普拉斯
23+
PLCC
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CYPRESS
2023+
PLCC
50000
原装现货
询价
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
CYPRESS
2406+
QFP
3266
优势代理渠道 原装现货 可全系列订货
询价
Cypress(赛普拉斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
CYP
24+
PLCC52
1
全新现货
询价
更多CY7C136供应商 更新时间2026-1-27 16:31:00