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型号	下载订购	功能描述	制造商上传企业	LOGO
CY7C1362A	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150AC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150AI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150AJC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150AJI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150BGC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-150BGI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-166AC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-166AI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1362A-166AJC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

详细参数

型号：
CY7C1362A
制造商：
Rochester Electronics LLC
功能描述：
- Bulk
制造商：
Cypress Semiconductor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	CY7C1362A-200AC	CYPRESS	05+	QFP	190		询价
深圳市一线半导体有限公司	CY7C1362A-150AJC	CY	24+	TQFP100	14		询价
深圳市毅创腾电子科技有限公司	CY7C1362A-200AC	Cypress		QFP	1200	Cypress一级分销,原装原盒原包装!	询价
深圳市欧立现代科技有限公司	CY7C1362A-200AJC	CYRESS	24+	TQFP	6980	原装现货,可开13%税票	询价
深圳市英卓尔科技有限公司	CY7C1362A-166AC	Cypress	20+	QFP	500	样品可出,优势库存欢迎实单	询价
华富测量(深圳)传感技术有限公司	CY7C1362A-200AC	CY	2138+	QFP	8960	专营BGA,QFP原装现货,假一赔十	询价
贸泽芯城（深圳）电子科技有限公司	CY7C1362A-150AJC	CYPRESS/赛普拉斯	23+	QFP-100L	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市跃创芯科技有限公司	CY7C1362A-150AJC	CYPRESS/赛普拉斯	22+	QFP	20000	原装现货,实单支持	询价
深圳市安富世纪电子有限公司	CY7C1362A-150AC	CYPRESS/赛普拉斯	23+	QFP	6500	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	CY7C1362A-150AJC	ADI	23+	QFP	7000		询价

更多CY7C1362A供应商更新时间2026-1-27 11:04:00

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