256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5

文件：818.24 Kbytes 页数：26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5

文件：818.24 Kbytes 页数：26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5

文件：818.24 Kbytes 页数：26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5

文件：818.24 Kbytes 页数：26 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司