DBL1012

DUALPREAMPLIFIER

DUALPREAMPLIFIER

DI1012S

SurfaceMountBridgeRectifier-Glasspassivatedtype

Glasspassivatedtype Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Highsurgecurrentcapability •I

DMD1012

ROHSCOMPLIANTMETALGATERFSILICONFET

DMD1012-A

ROHSCOMPLIANTMETALGATERFSILICONFET

DMG1012T

N-CHANNELENHANCEMENTMODEMOSFET

N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice(Note3) •

DMG1012T

N-Channel20V(D-S)MOSFET

DMG1012UW

N-CHANNELENHANCEMENTMODEMOSFET

N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •ESDProtectedUpTo2KV •GreenDevice(Note2) •

DMG1012UW

N-ChannelEnhancementModeMOSFET

DMG1012UWQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMG1012UWQissuitablefo

DML1012LDS

SINGLECHANNELSMARTLOADSWITCH

Features LowRDS(ON)–EnsuresOn-StateLossesAreMinimized 0.8VtoVBIAS–1.5VInputVoltageRange 6AContinuousCurrent LowRDS(ON)InternalNFETs 8mΩatVBIAS=5V,VIN=1.05V,TA=+85°C 28μALowQuiescentCurrent 10μsTurnOnRiseTime 3.2Vto5.5VBiasVoltage Int