N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

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DIODES

美台半导体

丝印：BE2；Package：SOT323；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

文件：530.36 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BE2；Package：SOT323；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMG1012UWQ is suitable fo

文件：530.36 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Low On-Resistance\n•Low Gate Threshold Voltage\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•ESD Protected\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen and Antimony Free. “Green” Device \n•The DMG1012UWQ is suitable for automotive applicationsrequiring specifi;

Diodes

美台半导体