丝印：CSD18542KCS；Package：TO-220；CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

文件：924.42 Kbytes 页数：14 Pages

TI

德州仪器

丝印：CSD18542KCS；Package：TO-220；CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

文件：924.42 Kbytes 页数：14 Pages

TI

德州仪器

丝印：CSD18542KCS；Package：TO-220；CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

文件：924.42 Kbytes 页数：14 Pages

TI

德州仪器

丝印：CSD18542KCS；Package：TO-220；CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

文件：924.42 Kbytes 页数：14 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：321.21 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel NexFET Power MOSFET

文件：468.71 Kbytes 页数：11 Pages

TI

德州仪器