丝印：CSD19506KCS；Package：TO-220；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

文件：1.00818 Mbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19506KCS；Package：TO-220；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

文件：1.00818 Mbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19506KCS；Package：TO-220；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

文件：1.00818 Mbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19506KCS；Package：TO-220；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

文件：1.00818 Mbytes 页数：13 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：321.7 Kbytes 页数：2 Pages

ISC

无锡固电

80V N-Channel NexFET Power MOSFETs

文件：476.87 Kbytes 页数：10 Pages

TI

德州仪器