| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic 文件：704.77 Kbytes 页数：15 Pages | TI 德州仪器 | TI | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes 页数：16 Pages | TI 德州仪器 | TI | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes 页数：16 Pages | TI 德州仪器 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
QFN |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
TI/德州仪器 |
23+ |
8-WDFN |
4157 |
原装正品代理渠道价格优势 |
询价 | ||
TI |
1809+ |
DFN-8 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TI(德州仪器) |
2021+ |
WSON-8 |
499 |
询价 | |||
TI |
22+ |
8WSON (3.3x3.3) |
9000 |
原厂渠道,现货配单 |
询价 | ||
TI |
25+ |
(DMS) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI |
23+ |
8WSON (3.3x3.3) |
9000 |
原装正品，支持实单 |
询价 | ||
Texas Instruments |
2022+ |
8-WSON(3.3x3.3) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TI(德州仪器) |
24+ |
WSON8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
TI(德州仪器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 |
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