CSD87313DMST.B中文资料德州仪器数据手册PDF规格书

厂商型号	CSD87313DMST.B
功能描述	CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs
丝印标识	CSD87313
封装外壳	WSON
文件大小	704.77 Kbytes
页面数量	15 页
生产厂商	TI
中文名称	德州仪器
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-4 22:58:00
人工找货	CSD87313DMST.B价格和库存，欢迎联系客服免费人工找货

1 Features

1• Low-Source-to-Source On Resistance

• Dual Common Drain N-Channel MOSFETs

• Optimized for 5-V Gate Drive

• Low Qg and Qgd

• Low-Thermal Resistance

• Avalanche Rated

• Lead-Free Terminal Plating

• RoHS Compliant

• Halogen Free

• SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

• USB Type-C™ and Power Delivery (PD) VBus

Protection

• Battery Protection

• Load Switch

3 Description

The CSD87313DMS is a 30-V common drain, dual Nchannel

device designed for USB Type-C/PD and

battery protection. This SON 3.3-mm × 3.3-mm

device has low-source-to-source on resistance that

minimizes losses and offers low-component count for

space constrained applications.