丝印：CSD87313；Package：WSON；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

文件：704.77 Kbytes 页数：15 Pages

TI

德州仪器

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

文件：704.77 Kbytes 页数：15 Pages

TI

德州仪器

30-V Dual N-Channel NexFET Power MOSFETs

文件：1.15078 Mbytes 页数：16 Pages

TI

德州仪器

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

文件：704.77 Kbytes 页数：15 Pages

TI

德州仪器