55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

55-65GHz Low Noise / Medium Power Amplifier

55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The bac

文件：203.17 Kbytes 页数：6 Pages

UMS

20-30GHz Low Noise Amplifier

Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

文件：163.22 Kbytes 页数：9 Pages

UMS

20-30GHz Low Noise Amplifier

Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

文件：163.22 Kbytes 页数：9 Pages

UMS

20-30GHz Low Noise Amplifier

Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

文件：163.22 Kbytes 页数：9 Pages

UMS

24-26.5GHz Low Noise Amplifier

Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

文件：92.63 Kbytes 页数：6 Pages

UMS

24-26.5GHz Low Noise Amplifier

Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

文件：92.63 Kbytes 页数：6 Pages

UMS

24-26.5GHz Low Noise Amplifier

Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

文件：92.63 Kbytes 页数：6 Pages

UMS

20-30GHz Low Noise Amplifier

Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a

文件：112.15 Kbytes 页数：10 Pages

UMS

36-44GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air br

文件：195.11 Kbytes 页数：10 Pages

UMS