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CHA2

Isolated DC-DC Converters

文件:479.43 Kbytes 页数:8 Pages

BOTHHAND

CHA2063A

7-13GHz Low Noise Amplifier

Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless cera

文件:135.46 Kbytes 页数:10 Pages

UMS

CHA2066

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

文件:128 Kbytes 页数:8 Pages

UMS

CHA2066-99F/00

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

文件:128 Kbytes 页数:8 Pages

UMS

CHA2066-99FSLASH00

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

文件:128 Kbytes 页数:8 Pages

UMS

CHA2066-QAG

10-16GHz Low Noise Amplifier

Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. Main Features ■ Broadband performance 10-16GHz ■ 2.5dB noise figure, 10-16GHz (BD) ■

文件:299.24 Kbytes 页数:12 Pages

UMS

CHA2066RBF

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件:182.32 Kbytes 页数:8 Pages

UMS

CHA2066RBF/24

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件:182.32 Kbytes 页数:8 Pages

UMS

CHA2066RBFSLASH24

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件:182.32 Kbytes 页数:8 Pages

UMS

CHA2069

18-31GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance

文件:167 Kbytes 页数:8 Pages

UMS

技术参数

  • Reference produit:

     CHA2050-QDG

  • RF Bandwidth (GHz) min-max:

     17 - 21.5

  • Bias (mA):

     30

  • Case:

     QFN

  • Bias (V):

     2

  • Gain (dB):

     

  • Gain Flatness (+/-dB):

     

  • Noise Figure (dB):

     

  • P-1dB OUT (dBm):

     

供应商型号品牌批号封装库存备注价格
UMS
24+
SMD
9
询价
UMS
23+
裸片
6500
原装正品,假一罚十
询价
UMS
2001
SMD
9
原装现货海量库存欢迎咨询
询价
UMS
24+
SMD
1680
UMS专营进口原装现货假一赔十
询价
UMS
18+
SMD
85600
保证进口原装可开17%增值税发票
询价
UMS
25+
N/A
90000
进口原装现货假一罚十价格合理
询价
UMS
13+
NA
100
终端备货原装现货-军工器件供应商
询价
UMS
三年内
1983
只做原装正品
询价
最新
2000
原装正品现货
询价
UMS
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多CHA2供应商 更新时间2026-3-9 16:30:00