20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

GaAs Monolithic Microwave IC in SMD leadless package

Main Features Typical gain, input return losses, output return losses and Noise Figure (dB) versus frequency ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Noise Figure: 1.2dB ■ Output power @ 1dB comp.: 10dBm ■ DC bias: Vd=4V @ Id=45mA ■ 24L-QFN4x4 ■ MSL1 Description The CH

文件：676.37 Kbytes 页数：10 Pages

UMS

GaAs Monolithic Microwave IC in SMD leadless package

Main Features Typical gain, input return losses, output return losses and Noise Figure (dB) versus frequency ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Noise Figure: 1.2dB ■ Output power @ 1dB comp.: 10dBm ■ DC bias: Vd=4V @ Id=45mA ■ 24L-QFN4x4 ■ MSL1 Description The CH

文件：676.37 Kbytes 页数：10 Pages

UMS

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS