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型号	下载订购	功能描述	制造商上传企业	LOGO
CHA2093RBFSLASH24	文件：186.34 Kbytes Page：8 Pages	20-30GHz Low Noise Amplifier Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features 文件：186.34 Kbytes 页数：8 Pages	UMS	UMS
CHA2094B	文件：111 Kbytes Page：8 Pages	36-40GHz Low Noise High Gain Amplifier Description The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. Main Features • Broadband performances : 36-40GHz • 3.0dB Noise Figure • 21dB gain • ±1.5dB gain flatness • Low DC pow 文件：111 Kbytes 页数：8 Pages	UMS	UMS
CHA2094B99F/00	文件：111 Kbytes Page：8 Pages	36-40GHz Low Noise High Gain Amplifier Description The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. Main Features • Broadband performances : 36-40GHz • 3.0dB Noise Figure • 21dB gain • ±1.5dB gain flatness • Low DC pow 文件：111 Kbytes 页数：8 Pages	UMS	UMS
CHA2094B99FSLASH00	文件：111 Kbytes Page：8 Pages	36-40GHz Low Noise High Gain Amplifier Description The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. Main Features • Broadband performances : 36-40GHz • 3.0dB Noise Figure • 21dB gain • ±1.5dB gain flatness • Low DC pow 文件：111 Kbytes 页数：8 Pages	UMS	UMS
CHA2095A	文件：106 Kbytes Page：7 Pages	36-40GHz Low Noise Very High Gain Amplifier Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and elec 文件：106 Kbytes 页数：7 Pages	UMS	UMS
CHA2095A99F/00	文件：106 Kbytes Page：7 Pages	36-40GHz Low Noise Very High Gain Amplifier Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and elec 文件：106 Kbytes 页数：7 Pages	UMS	UMS
CHA2095A99FSLASH00	文件：106 Kbytes Page：7 Pages	36-40GHz Low Noise Very High Gain Amplifier Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and elec 文件：106 Kbytes 页数：7 Pages	UMS	UMS
CHA2097A	文件：120.66 Kbytes Page：8 Pages	20-40GHz Variable Gain Amplifier Description The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Features 文件：120.66 Kbytes 页数：8 Pages	UMS	UMS
CHA2097A99F/00	文件：120.66 Kbytes Page：8 Pages	20-40GHz Variable Gain Amplifier Description The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Features 文件：120.66 Kbytes 页数：8 Pages	UMS	UMS
CHA2097A99FSLASH00	文件：120.66 Kbytes Page：8 Pages	20-40GHz Variable Gain Amplifier Description The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Features 文件：120.66 Kbytes 页数：8 Pages	UMS	UMS

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技术参数

Reference produit：
CHA2050-QDG
RF Bandwidth (GHz) min-max：
17 - 21.5
Bias (mA)：
30
Case：
QFN
Bias (V)：
2
Gain (dB)：
Gain Flatness (+/-dB)：
Noise Figure (dB)：
P-1dB OUT (dBm)：

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	CHA2098RBF/24	UMS	24+	SMD	9		询价
齐创科技(上海,北京,青岛)有限公司	CHA2090-99F/00	UMS	23+	裸片	6500	原装正品,假一罚十	询价
上海鑫科润电子科技有限公司	CHA2098RBF/24	UMS	2001	SMD	9	原装现货海量库存欢迎咨询	询价
千层芯半导体(深圳)有限公司	CHA2190-99F/00	UMS	24+	SMD	1680	UMS专营进口原装现货假一赔十	询价
深圳诚思涵科技有限公司	CHA2094B99F/00	UMS	18+	SMD	85600	保证进口原装可开17%增值税发票	询价
深圳市宇集芯电子有限公司	CHA2194-99F/00	UMS	25+	N/A	90000	进口原装现货假一罚十价格合理	询价
深圳市昊创电子有限公司	CHA2069-99F/00	UMS	13+	NA	100	终端备货原装现货-军工器件供应商	询价
深圳市纳立科技有限公司	CHA2395-99F/00	UMS	三年内		1983	只做原装正品	询价
君宇国际实业有限公司	CHA2080-98F			最新	2000	原装正品现货	询价
艾睿（深圳）半导体有限公司	CHA2069-QAG/21	UMS	2447	QFN	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多CHA2供应商更新时间2026-3-11 16:30:00

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