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型号	下载订购	功能描述	制造商上传企业	LOGO
CHA2069-99F/00	文件：167 Kbytes Page：8 Pages	18-31GHz Low Noise Amplifier Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 文件：167 Kbytes 页数：8 Pages	UMS	UMS
CHA2069-99FSLASH00	文件：167 Kbytes Page：8 Pages	18-31GHz Low Noise Amplifier Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 文件：167 Kbytes 页数：8 Pages	UMS	UMS
CHA2069-QDG	文件：439.47 Kbytes Page：18 Pages	18-30GHz Low Noise Amplifier Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets. Main Features ■ Broadband performance 18-30GHz ■ 3dB noise figure ■ 20dB 文件：439.47 Kbytes 页数：18 Pages	UMS	UMS
CHA2069RAF	文件：171.64 Kbytes Page：7 Pages	18-31GHz Low Noise Amplifier Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai 文件：171.64 Kbytes 页数：7 Pages	UMS	UMS
CHA2069RAF/24	文件：171.64 Kbytes Page：7 Pages	18-31GHz Low Noise Amplifier Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai 文件：171.64 Kbytes 页数：7 Pages	UMS	UMS
CHA2069RAFSLASH24	文件：171.64 Kbytes Page：7 Pages	18-31GHz Low Noise Amplifier Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai 文件：171.64 Kbytes 页数：7 Pages	UMS	UMS
CHA2090	文件：130.83 Kbytes Page：8 Pages	17-24GHz Low Noise Amplifier Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai 文件：130.83 Kbytes 页数：8 Pages	UMS	UMS
CHA2090-99F/00	文件：130.83 Kbytes Page：8 Pages	17-24GHz Low Noise Amplifier Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai 文件：130.83 Kbytes 页数：8 Pages	UMS	UMS
CHA2090-99FSLASH00	文件：130.83 Kbytes Page：8 Pages	17-24GHz Low Noise Amplifier Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai 文件：130.83 Kbytes 页数：8 Pages	UMS	UMS
CHA2091	文件：115.85 Kbytes Page：8 Pages	36-40GHz Low Noise Amplifier Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad 文件：115.85 Kbytes 页数：8 Pages	UMS	UMS

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技术参数

Reference produit：
CHA2050-QDG
RF Bandwidth (GHz) min-max：
17 - 21.5
Bias (mA)：
30
Case：
QFN
Bias (V)：
2
Gain (dB)：
Gain Flatness (+/-dB)：
Noise Figure (dB)：
P-1dB OUT (dBm)：

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	CHA2098RBF/24	UMS	24+	SMD	9		询价
齐创科技(上海,北京,青岛)有限公司	CHA2090-99F/00	UMS	23+	裸片	6500	原装正品,假一罚十	询价
上海鑫科润电子科技有限公司	CHA2098RBF/24	UMS	2001	SMD	9	原装现货海量库存欢迎咨询	询价
千层芯半导体(深圳)有限公司	CHA2190-99F/00	UMS	24+	SMD	1680	UMS专营进口原装现货假一赔十	询价
深圳诚思涵科技有限公司	CHA2094B99F/00	UMS	18+	SMD	85600	保证进口原装可开17%增值税发票	询价
深圳市宇集芯电子有限公司	CHA2194-99F/00	UMS	25+	N/A	90000	进口原装现货假一罚十价格合理	询价
深圳市昊创电子有限公司	CHA2069-99F/00	UMS	13+	NA	100	终端备货原装现货-军工器件供应商	询价
深圳市纳立科技有限公司	CHA2395-99F/00	UMS	三年内		1983	只做原装正品	询价
君宇国际实业有限公司	CHA2080-98F			最新	2000	原装正品现货	询价
艾睿（深圳）半导体有限公司	CHA2069-QAG/21	UMS	2447	QFN	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多CHA2供应商更新时间2026-3-11 16:30:00

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