CHA2190中文资料UMS数据手册PDF规格书
CHA2190规格书详情
描述 Description
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Main Feature
■< Broad band performance 20-30GHz
■< 2.2dB noise figure
■< 15dB gain, ± 0.5dB gain flatness
■< Low DC power consumption, 50mA
■< 20dBm 3rd order intercept point
■
产品属性
- 型号：
CHA2190
- 制造商：
UMS
- 制造商全称：
United Monolithic Semiconductors
- 功能描述：
20-30GHz Low Noise Amplifier
