N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

文件：515.73 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ​​​​​​​● TO-220 & TO-263 package.

文件：516.96 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ​​​​​​​● TO-220 & TO-263 package.

文件：528.71 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：382.5 Kbytes 页数：4 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) =  8mΩ @VGS=10V.\n             RDS(ON) = 12mΩ @VGS=4.5V.\nSuper high dense cell design for extremely low RDS(ON)\nHigh power and current handing capability.\nTO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞