| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
NCHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETSTRANSISTORS FEATURE NchannelinaplasticTO-3PMLpackage. CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: •CommonEmitter •PG=9.5dBat35W/860MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | ASI | ||
CrystalFilter | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
NegativepowersupplyforCCDcameraofmobilephones | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Ultra-compactIndustrialPC | BECKHOFFBECKHOFF INC 倍福自动化 | BECKHOFF | ||
Excellentsignalintegrityathighfrequencies | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,52A,RDS(ON)=11mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
详细参数
- 型号：
CEP6030L
- 制造商：
CET
- 制造商全称：
Chino-Excel Technology
- 功能描述：
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2017+ |
TO-220 |
44558 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
CET |
23+ |
DIP-14 |
18000 |
询价 | |||
CET |
2022 |
TO220/3 |
2058 |
原厂原装正品,价格超越代理 |
询价 | ||
CET |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
CET |
TO |
355661 |
询价 | ||||
CET |
1408+ |
TO-220 |
8000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
CET |
3997 |
原装正品现货供应 |
询价 | ||||
CET |
23+ |
TO-220AB |
5000 |
原装正品,假一罚十 |
询价 | ||
CEP |
16+ |
TO-263 |
10000 |
全新原装现货 |
询价 |
相关规格书
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相关库存
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