Ultra-compact Industrial PC

文件：133.99 Kbytes 页数：2 Pages

BECKHOFF

倍福自动化

Excellent signal integrity at high frequencies

文件：773.69 Kbytes 页数：5 Pages

IRONWOOD

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 52A, RDS(ON) = 11mΩ (typ) @VGS = 10V. RDS(ON) = 16mΩ (typ) @VGS = 5V. ■ Extra low gate charge. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：516.69 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

文件：516.77 Kbytes 页数：5 Pages

CET

华瑞