APT6030规格书市场行情无锡固电ADPOW-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
APT6030	文件：61.85 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030	文件：64.18 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030BN	文件：51.11 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology
APT6030BN	文件：123.97 Kbytes Page：4 Pages	N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS FEATURE NchannelinaplasticTO-3PMLpackage. CompliancetoRoHS.	COMSET Comset Semiconductor
APT6030BNR	文件：360.6 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
APT6030BVFR	文件：64.18 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030BVR	文件：61.85 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030BVR	文件：116.22 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030BVR_04	文件：116.22 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030DN	文件：328.15 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
APT6030SVR	文件：116.22 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology
APT6030BVFR	文件：420.35 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
APT6030BVFR	文件：142.99 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW Advanced Power Technology
APT6030BVFR_05	文件：142.99 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW Advanced Power Technology
APT6030BVR	文件：420.34 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
APT6030SVFR	文件：142.99 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW Advanced Power Technology
6030	文件：373.82 Kbytes Page：1 Pages	PLUGSANDJACKS [KEYSTONE]	etc2List of Unclassifed Manufacturers etc2未分类制造商
ADNK-6030	文件：120.41 Kbytes Page：1 Pages	LowPowerLaserMouseSensor	BOARDCOMBroadcom Corporation. 博通公司博通半导体
ADNK-6030	文件：120.41 Kbytes Page：1 Pages	LowPowerLaserMouseSensor	AVAGOAvago 安华高安华高科技
ADNS-6030	文件：166.4 Kbytes Page：6 Pages	USB2.4GHzRFWirelessLaserMouseDesigner?셲Kit	AVAGOAvago 安华高安华高科技

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详细参数

型号：
APT6030
制造商：
ADPOW
制造商全称：
Advanced Power Technology
功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	APT6030	ADPOW	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市国宇半导体科技有限公司	APT6030	APT	23+	TO-247	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	APT6030	APT	22+	TO-247	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	APT6030	APT	23+	TO-247	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	APT6030	APT	23+	TO-247	8400	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	APT6030	APT	24+	TO-247	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市安富世纪电子有限公司	APT6030	APT	23+	TO-247	8400	专注配单,只做原装进口现货	询价
深圳市特顺芯科技有限公司	APT6030BNR				1100		询价
深圳市星佑电子有限公司	APT6030BVFR	APT	335	TO-247	1789	全新原装现货100真实自己公司	询价
深圳市壹芯创科技有限公司	APT6030SVR	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价

更多APT6030供应商更新时间2024-4-27 8:01:00

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