首页 >APT6045CVR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
APT6045CVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | |
SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSV짰FREDFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
POWERMOSV짰FREDFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSV짰FREDFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
POWERMOSV짰FREDFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
SMTO-8CASCADABLEAMPLIFIER | TELEDYNE TELEDYNE | TELEDYNE | ||
WireWoundMagneticallyShieldedSMDPowerInductor | ABRACONAbracon Corporation 阿布雷肯 | ABRACON | ||
19SP227/30TCPEPVCComputerCable | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
InductorsforPowerCircuitsWoundFerrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | TDK | ||
DINRailMount | crydomCrydom Inc., 快达 | crydom |
详细参数
- 型号：
APT6045CVR
- 制造商：
ADPOW
- 制造商全称：
Advanced Power Technology
- 功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
17+ |
NULL |
31518 |
原装正品 可含税交易 |
询价 | ||
APT |
08+(pbfree) |
8866 |
询价 | ||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
APT |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
APT |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
APT |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
询价 | ||
APT |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
APT |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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