N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.35Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode

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ISC

无锡固电

POWER MOS IV 600V 19.0A 0.35 Ohm

APT

晶科电子

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

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TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：222.45 Kbytes 页数：12 Pages

TECCOR

N-Channel Enhancement-Mode Vertical DMOS Power FETs???

N-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor control □ Converters □ Amplifiers □ Telecom Switching □ Power supply circuits □ Drivers (Relays, Hammers, Solendnoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

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SUTEX