APT6060DN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ASPIAIG-F6060

MoldedSMDPowerInductor(AEC-Q200Grade0)

Features •PPAPreadyandsupported •TS16949certifiedproductionlines •AEC-Q200qualified(-55˚C~+155˚C) •Shieldedconstruction •Softsaturation •LowDCR,HighEfficiency Applications •Bodyelectronicsandcomfortsystem •Infotainmentandentertainment •Electricvehicles •Lighting

AXIOM6060

QualifiedaccordingtoMIL-PRF-55310Level?쏶?

AXIOM6060A

Ultra-LowPhaseNoise120MHzOCXOforSpaceApplication

BLP6060A

BLP6060A

BLP6060A

C6060A

17SP227/30TCPEPVCComputerCable

CEB6060

N-ChannelEnhancementModeFieldEffectTransistor

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.