isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：360.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：337.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：298.36 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliab

文件：657.9 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：634.84 Kbytes 页数：12 Pages

DIODES

美台半导体