APT6030DN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

APT6030SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

APT6030SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ASITPV6030

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: •CommonEmitter •PG=9.5dBat35W/860MHz •Omnigold™MetalizationSystem

ATFN6030A

CrystalFilter

BD6030GSW

NegativepowersupplyforCCDcameraofmobilephones

C6030

Ultra-compactIndustrialPC

CBT-BGA-6030

Excellentsignalintegrityathighfrequencies

CEB6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package