isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode p

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ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV6030 is Designed for Television Band IV & V Applications up to 860 MHz. FEATURES: • Common Emitter • PG = 9.5 dB at 35 W/860 MHz • Omnigold™ Metalization System

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ASI