isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：359.9 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：336.82 Kbytes 页数：2 Pages

ISC

无锡固电

V(dss): 600V; 13.0A; 0.60 Ohm; N-channel enhancement mode high voltage power MOSFET

APT

晶科电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.64 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.3 Kbytes 页数：2 Pages

ISC

无锡固电

Molded SMD Power Inductor (AEC-Q200 Grade 0)

Features •PPAP ready and supported •TS16949 certified production lines •AEC-Q200 qualified (-55˚C ~ +155˚C) •Shielded construction •Soft saturation •Low DCR, High Efficiency Applications •Body electronics and comfort system •Infotainment and entertainment •Electric vehicles •Lighting

文件：635.86 Kbytes 页数：4 Pages

ABRACON