POWER MOS V짰 FREDFET

文件：138.46 Kbytes 页数：4 Pages

MICROSEMI

美高森美

POWER MOS V짰 FREDFET

文件：138.46 Kbytes 页数：4 Pages

MICROSEMI

美高森美

FREDFETs

ROHS

Microchip

微芯科技

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

文件：73.16 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

文件：70.26 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

文件：70.26 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉