N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package

文件：404.54 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：86.42 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：659.3 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：529.61 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple.

文件：400.95 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired.

文件：743.03 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.82 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：380.87 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -20A, RDS(ON) =130mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：642.53 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：101.26 Kbytes 页数：4 Pages

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