N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple.

文件：400.95 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 20A, RDS(ON) = 0.18W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant.

文件：455.8 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Power MOSFET

文件：443.71 Kbytes 页数：5 Pages

LINGXUN

凌讯微电子

Low Intrinsic Capacitances

文件：2.68488 Mbytes 页数：8 Pages

FOSTER

福斯特半导体