N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：101.26 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 25A,RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：472.57 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：200.38 Kbytes 页数：2 Pages

CHENMKO

力勤

SLOTTED OPTICAL SWITCH

文件：307.53 Kbytes 页数：4 Pages

QT

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. T

文件：104.21 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体