N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package

文件：404.54 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

Schottky Barrier Diode

FEATURES * TO-220AB Case * Fully Molded * Dual Diodes – Cathode Common * Low Forward Voltage Drop * High Surge Capability * Tj=150 °C operation

文件：55.82 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

文件：799.32 Kbytes 页数：7 Pages

KSS

京瓷

SBD DUAL DIODES - CATHODE COMMON

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：45.34 Kbytes 页数：6 Pages

NIEC