CEP20A03

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,197A,RDS(ON)=2mΩ@VGS=10V. RDS(ON)=3mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package

FCH20A03L

SchottkyBarrierDiode

FEATURES *TO-220ABCase *FullyMolded *DualDiodes–CathodeCommon *LowForwardVoltageDrop *HighSurgeCapability *Tj=150°Coperation

FCH20A03L

SchottkyBarrierDiode

FCQ20A03L

SchottkyBarrierDiode

SchottkyBarrierDiode

FCQ20A03L

SBDDUALDIODES-CATHODECOMMON

FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *DualDiodes–CathodeCommon *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

GCQ20A03L

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ABCase *DualDiodes–CathodeCommon *LowForwardVoltageDrop *HighSurgeCapability *Tj=150°Coperation

HDS20A03X

SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers

KCQ20A03L

SBD

KCQ20A03L

SchottkyBarrierDiode

FEATURES *SimilartoTO-247AC(TO-3P)Case *DualDiodes–CathodeCommon *ExtremelyLowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCurrentCapability *30Voltsthru60VoltsTypesAvailable