CEP20P06

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEP20P06

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CEP20P06

P Channel MOSFET;

CEP20P06_10

P-Channel Enhancement Mode Field Effect Transistor

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM20P06PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

EMB20P06A

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

G20P06K

P-ChannelEnhancementModePowerMOSFET

Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G20P06KA

P-ChannelEnhancementModePowerMOSFET

Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters